Dr. Kenan Gundogdu
Our paper, Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si, has been published in the Early Edition of Proceedings of the National Academy of Sciences of the USA
Our presentation, Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si, has been featured by the NC State News, PhysOrg.com, EurekAlert, nanowerk, and Science Daily.
A conference talk at the 30th International Conference on the Physics of Semiconductors (ICPS 2010): Bond-specific evolution of oxidation of H-terminated (111)Si measured by second-harmonic generation” Bilal Gokce, David E. Aspnes, Eric J. Adles, Kenan Gundogdu
Dr. Gundogdu will be teaching at Epioptics-11 Summer School in Erice- Sicily, Italy from July 19-25, 2010.
5th ICSE in Albany, NY (May 23-28, 2010) “Observation of bond-by-bond interface formation during the oxidation of (111)Si” Kenan Gundogdu, Bilal Gokce, David E. Aspnes, Eric J. Adles