Paper published in Applied Physics Letters
Our paper, Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping, has been published in Applied Physics Letters
okce who won ‘best poster’ at the Coherant 14th Annual Southeast Ultrafast Conference (SEUFC) 2011
Congratulations to Bilal Gokce who won ‘best poster’ at the Coherant 14th Annual Southeast Ultrafast Conference (SEUFC) 2011 in Oak Ridge, TN. Read more.
Paper published in the Early Edition of Proceedings of the National Academy of Sciences of the USA
Our paper, Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si, has been published in the Early Edition of Proceedings of the National Academy of Sciences of the USA
Our presentation, Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si, has been featured by the NC State News , PhysOrg.com, EurekAlert, nanowerk, and Science Daily
Our presentation, Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si, has been featured by the NC State News, PhysOrg.com, EurekAlert, nanowerk, and Science Daily.
Conference Talk at the 30th ICPS in Seoul, Korea
A conference talk at the 30th International Conference on the Physics of Semiconductors (ICPS 2010): Bond-specific evolution of oxidation of H-terminated (111)Si measured by second-harmonic generation” Bilal Gokce, David E. Aspnes, Eric J. Adles, Kenan Gundogdu